onsemi QFET P-Channel MOSFET, 19 A, 60 V, 3-Pin TO-220F FQPF27P06

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Subtotal (1 tube of 50 units)*

£57.15

(exc. VAT)

£68.60

(inc. VAT)

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  • 200 unit(s) ready to ship
  • Plus 999,999,750 unit(s) shipping from 08 January 2026
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Units
Per unit
Per Tube*
50 - 200£1.143£57.15
250 - 950£0.978£48.90
1000 - 2450£0.953£47.65
2500 +£0.928£46.40

*price indicative

RS Stock No.:
124-1401
Mfr. Part No.:
FQPF27P06
Brand:
onsemi
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Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220F

Series

QFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

120 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

33 nC @ 10 V

Length

10.67mm

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Width

4.7mm

Minimum Operating Temperature

-55 °C

Height

16.3mm

QFET® P-Channel MOSFET, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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