onsemi P-Channel MOSFET, 33 A, 100 V, 3-Pin D2PAK FQB34P10TM
- RS Stock No.:
- 671-0891
- Mfr. Part No.:
- FQB34P10TM
- Brand:
- onsemi
Subtotal (1 unit)*
£2.41
(exc. VAT)
£2.89
(inc. VAT)
FREE delivery for orders over £50.00
- 1 unit(s) ready to ship
- Plus 3,151 unit(s) shipping from 09 October 2025
Units | Per unit |
---|---|
1 - 9 | £2.41 |
10 - 99 | £2.08 |
100 - 499 | £1.80 |
500 + | £1.58 |
*price indicative
- RS Stock No.:
- 671-0891
- Mfr. Part No.:
- FQB34P10TM
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 33 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 60 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 3.75 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -25 V, +25 V | |
Maximum Operating Temperature | +175 °C | |
Length | 10.67mm | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Width | 9.65mm | |
Typical Gate Charge @ Vgs | 85 nC @ 10 V | |
Height | 4.83mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 33 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 60 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 3.75 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 9.65mm | ||
Typical Gate Charge @ Vgs 85 nC @ 10 V | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
Automotive P-Channel MOSFET, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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