Toshiba N-Channel MOSFET, 30 A, 250 V, 3-Pin TO-3PN TK30J25D,S1F(O
- RS Stock No.:
- 144-5214
- Mfr. Part No.:
- TK30J25D,S1F(O
- Brand:
- Toshiba
Currently unavailable
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- RS Stock No.:
- 144-5214
- Mfr. Part No.:
- TK30J25D,S1F(O
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Toshiba | |
Channel Type | N | |
Maximum Continuous Drain Current | 30 A | |
Maximum Drain Source Voltage | 250 V | |
Package Type | TO-3PN | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 60 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.5V | |
Minimum Gate Threshold Voltage | 1.5V | |
Maximum Power Dissipation | 260 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | +20 V | |
Number of Elements per Chip | 1 | |
Length | 15.5mm | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 100 nC @ 10 V | |
Width | 4.5mm | |
Maximum Operating Temperature | +150 °C | |
Height | 20mm | |
Forward Diode Voltage | 1.7V | |
Select all | ||
---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 250 V | ||
Package Type TO-3PN | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 60 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 260 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage +20 V | ||
Number of Elements per Chip 1 | ||
Length 15.5mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 100 nC @ 10 V | ||
Width 4.5mm | ||
Maximum Operating Temperature +150 °C | ||
Height 20mm | ||
Forward Diode Voltage 1.7V | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
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