Vishay N-Channel MOSFET, 24.2 A, 250 V, 8-Pin PowerPAK SO-8 SIR692DP-T1-RE3
- RS Stock No.:
- 134-9731
- Mfr. Part No.:
- SIR692DP-T1-RE3
- Brand:
- Vishay
Subtotal (1 pack of 5 units)*
£7.09
(exc. VAT)
£8.51
(inc. VAT)
FREE delivery for orders over £50.00
- 6,000 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
5 - 45 | £1.418 | £7.09 |
50 - 120 | £1.206 | £6.03 |
125 - 245 | £1.05 | £5.25 |
250 - 495 | £0.864 | £4.32 |
500 + | £0.68 | £3.40 |
*price indicative
- RS Stock No.:
- 134-9731
- Mfr. Part No.:
- SIR692DP-T1-RE3
- Brand:
- Vishay
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 24.2 A | |
Maximum Drain Source Voltage | 250 V | |
Package Type | PowerPAK SO-8 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 67 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 104 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 6.25mm | |
Number of Elements per Chip | 1 | |
Width | 5.26mm | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 25.3 nC @ 10 V | |
Forward Diode Voltage | 1.1V | |
Minimum Operating Temperature | -55 °C | |
Height | 1.12mm | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 24.2 A | ||
Maximum Drain Source Voltage 250 V | ||
Package Type PowerPAK SO-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 67 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 104 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.25mm | ||
Number of Elements per Chip 1 | ||
Width 5.26mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 25.3 nC @ 10 V | ||
Forward Diode Voltage 1.1V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.12mm | ||
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
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