Vishay Type N-Channel MOSFET, 421 A, 30 V Enhancement, 8-Pin PowerPAK SO-8DC

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Subtotal (1 reel of 3000 units)*

£3,168.00

(exc. VAT)

£3,801.00

(inc. VAT)

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3000 +£1.056£3,168.00

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RS Stock No.:
252-0248
Mfr. Part No.:
SIDR500EP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

421A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK SO-8DC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00068mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

46.1nC

Maximum Power Dissipation Pd

150W

Maximum Operating Temperature

175°C

Width

5.15 mm

Length

6.15mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

TrenchFET Gen V power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Higher power density with very low RDS(on)

Thermally enhanced compact package

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