Vishay N-Channel MOSFET, 421 A, 30 V, 8-Pin PowerPak SO-8DC SIDR500EP-T1-RE3
- RS Stock No.:
- 252-0248
- Mfr. Part No.:
- SIDR500EP-T1-RE3
- Brand:
- Vishay
Subtotal (1 reel of 3000 units)*
£3,168.00
(exc. VAT)
£3,801.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 3,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £1.056 | £3,168.00 |
*price indicative
- RS Stock No.:
- 252-0248
- Mfr. Part No.:
- SIDR500EP-T1-RE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 421 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | PowerPak SO-8DC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 421 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PowerPak SO-8DC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.
TrenchFET Gen V power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Higher power density with very low RDS(on)
Thermally enhanced compact package
Very low RDS x Qg figure-of-merit (FOM)
Higher power density with very low RDS(on)
Thermally enhanced compact package
Related links
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