Vishay N-Channel MOSFET, 24.2 A, 250 V, 8-Pin PowerPAK SO-8 SIR692DP-T1-RE3

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Subtotal (1 reel of 3000 units)*

£1,869.00

(exc. VAT)

£2,244.00

(inc. VAT)

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Per Reel*
3000 +£0.623£1,869.00

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RS Stock No.:
134-9163
Mfr. Part No.:
SIR692DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

24.2 A

Maximum Drain Source Voltage

250 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

67 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

6.25mm

Width

5.26mm

Typical Gate Charge @ Vgs

25.3 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.12mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor



MOSFET Transistors, Vishay Semiconductor

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