Vishay N-Channel MOSFET, 29 A, 150 V, 8-Pin PowerPAK SO-8 SIR632DP-T1-RE3

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Subtotal (1 reel of 3000 units)*

£1,461.00

(exc. VAT)

£1,752.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.487£1,461.00

*price indicative

RS Stock No.:
134-9159
Mfr. Part No.:
SIR632DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

150 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

69.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.26mm

Length

6.25mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.1V

Height

1.12mm

Minimum Operating Temperature

-55 °C

N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor



MOSFET Transistors, Vishay Semiconductor

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