Vishay Silicon N-Channel MOSFET, 42.6 A, 100 V, 8-Pin SO-8 SIR5112DP-T1-RE3

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Subtotal (1 reel of 3000 units)*

£1,902.00

(exc. VAT)

£2,283.00

(inc. VAT)

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  • 6,000 unit(s) ready to ship
  • Plus 999,993,000 unit(s) shipping from 11 June 2026
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Per Reel*
3000 +£0.634£1,902.00

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RS Stock No.:
279-9945
Mfr. Part No.:
SIR5112DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

42.6 A

Maximum Drain Source Voltage

100 V

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

Silicon

Number of Elements per Chip

1

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested

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