Vishay SiR Type N-Channel MOSFET, 47.6 A, 100 V Enhancement, 8-Pin SO-8 SIR5110DP-T1-RE3

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Subtotal (1 pack of 4 units)*

£8.42

(exc. VAT)

£10.104

(inc. VAT)

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  • 6,000 unit(s) ready to ship
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Units
Per unit
Per Pack*
4 - 56£2.105£8.42
60 - 96£2.06£8.24
100 - 236£1.83£7.32
240 - 996£1.795£7.18
1000 +£1.758£7.03

*price indicative

Packaging Options:
RS Stock No.:
279-9944
Mfr. Part No.:
SIR5110DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

47.6A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

SiR

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0125Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

20nC

Maximum Power Dissipation Pd

59.5W

Maximum Operating Temperature

150°C

Length

5.15mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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