Vishay SiR Type N-Channel MOSFET, 47.6 A, 100 V Enhancement, 8-Pin SO-8 SIR5110DP-T1-RE3

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Subtotal (1 pack of 4 units)*

£7.92

(exc. VAT)

£9.52

(inc. VAT)

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Per Pack*
4 - 56£1.98£7.92
60 - 96£1.938£7.75
100 - 236£1.723£6.89
240 - 996£1.688£6.75
1000 +£1.653£6.61

*price indicative

Packaging Options:
RS Stock No.:
279-9944
Mfr. Part No.:
SIR5110DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

47.6A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

SiR

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0125Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

20nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

59.5W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

5.15mm

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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