Vishay TrenchFET Gen IV Type N-Channel MOSFET, 65.8 A, 100 V Enhancement, 8-Pin SO-8

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Subtotal (1 pack of 25 units)*

£29.35

(exc. VAT)

£35.225

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 25£1.174£29.35
50 - 100£0.999£24.98
125 - 225£0.881£22.03
250 - 600£0.764£19.10
625 +£0.704£17.60

*price indicative

RS Stock No.:
200-6865
Mfr. Part No.:
SiR106ADP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

65.8A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET Gen IV

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

83.3W

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

52nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

6.15mm

Standards/Approvals

No

Width

5.15 mm

Length

5.15mm

Automotive Standard

No

The Vishay SiR106ADP-T1-RE3 is a N-channel 100V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

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