Vishay TrenchFET Gen IV Type N-Channel MOSFET, 65.8 A, 100 V Enhancement, 8-Pin SO-8 SiR106ADP-T1-RE3

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Subtotal (1 reel of 3000 units)*

£1,731.00

(exc. VAT)

£2,076.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.577£1,731.00

*price indicative

RS Stock No.:
200-6863
Mfr. Part No.:
SiR106ADP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

65.8A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET Gen IV

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

52nC

Maximum Power Dissipation Pd

83.3W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

5.15mm

Width

5.15 mm

Height

6.15mm

Automotive Standard

No

The Vishay SiR106ADP-T1-RE3 is a N-channel 100V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

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