Vishay SiDR104ADP Type N-Channel MOSFET, 81 A, 100 V Enhancement, 8-Pin SO-8 SiDR104ADP-T1-RE3

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Subtotal (1 pack of 10 units)*

£11.74

(exc. VAT)

£14.09

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40£1.174£11.74
50 - 90£0.98£9.80
100 - 240£0.954£9.54
250 - 490£0.93£9.30
500 +£0.906£9.06

*price indicative

Packaging Options:
RS Stock No.:
204-7220
Mfr. Part No.:
SiDR104ADP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

81A

Maximum Drain Source Voltage Vds

100V

Series

SiDR104ADP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.1mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

46.1nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

100W

Maximum Operating Temperature

150°C

Length

6.25mm

Standards/Approvals

No

Width

5.15 mm

Automotive Standard

No

The Vishay N-Channel 100 V (D-S) MOSFET has a very low RDS x Qg figure-of-merit (FOM). It is tuned for the lowest RDS x Qoss FOM.

TrenchFET Gen IV power MOSFET

100 % Rg and UIS tested

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