Vishay SiR104LDP Type N-Channel MOSFET, 81 A, 100 V Enhancement, 8-Pin SO-8 SiR104LDP-T1-RE3

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Subtotal (1 pack of 20 units)*

£15.94

(exc. VAT)

£19.12

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 80£0.797£15.94
100 - 180£0.781£15.62
200 - 480£0.615£12.30
500 - 980£0.56£11.20
1000 +£0.546£10.92

*price indicative

Packaging Options:
RS Stock No.:
204-7222
Mfr. Part No.:
SiR104LDP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

81A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

SiR104LDP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.1mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

110nC

Maximum Power Dissipation Pd

100W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Height

6.25mm

Width

1.12 mm

Length

5.26mm

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 100 V (D-S) MOSFET has a very low RDS x Qg figure-of-merit (FOM). It is tuned for the lowest RDS x Qoss FOM.

TrenchFET Gen IV power MOSFET

100 % Rg and UIS tested

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