Infineon HEXFET N-Channel MOSFET, 100 A, 25 V, 8-Pin PQFN 5 x 6 IRFH5250DTRPBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Series

HEXFET

Package Type

PQFN 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.35V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

156 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Length

6mm

Typical Gate Charge @ Vgs

83 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

0.85mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V