Infineon OptiMOS™ 5 N-Channel MOSFET, 100 A, 25 V, 8-Pin SuperSO8 5 x 6 BSC009NE2LS5IATMA1
- RS Stock No.:
- 133-9881
- Mfr. Part No.:
- BSC009NE2LS5IATMA1
- Brand:
- Infineon
Subtotal (1 pack of 5 units)*
£7.24
(exc. VAT)
£8.69
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 375 unit(s) ready to ship
- Plus 999,999,620 unit(s) shipping from 30 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | £1.448 | £7.24 |
*price indicative
- RS Stock No.:
- 133-9881
- Mfr. Part No.:
- BSC009NE2LS5IATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 25 V | |
| Series | OptiMOS™ 5 | |
| Package Type | SuperSO8 5 x 6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 1.35 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 74 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | +16 V | |
| Typical Gate Charge @ Vgs | 36 nC @ 10 V | |
| Length | 5.49mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Width | 6.35mm | |
| Forward Diode Voltage | 0.62V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.1mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 25 V | ||
Series OptiMOS™ 5 | ||
Package Type SuperSO8 5 x 6 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 1.35 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 74 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage +16 V | ||
Typical Gate Charge @ Vgs 36 nC @ 10 V | ||
Length 5.49mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 6.35mm | ||
Forward Diode Voltage 0.62V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
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