Name: Infineon DirectFET, HEXFET N-Channel MOSFET, 86 A, 60 V DirectFET ISOMETRIC IRF6648TRPBF
Brand: Infineon
SKU: 130-0948
Price: 1.69 GBP
Availability: InStock

DirectFET® Power MOSFET, Infineon

The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.

Industry lowest on-resistance in their respective footprints
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Units	Per unit	Per Pack*
2 - 18	£1.41	£2.82
20 - 48	£1.235	£2.47
50 - 98	£1.155	£2.31
100 - 198	£1.075	£2.15
200 +	£0.99	£1.98

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	86 A
	Maximum Drain Source Voltage	60 V
	Package Type	DirectFET ISOMETRIC
	Series	DirectFET, HEXFET
	Mounting Type	Surface Mount
	Maximum Drain Source Resistance	7 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4.9V
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	89 W
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Width	5.05mm
	Length	6.35mm
	Typical Gate Charge @ Vgs	36 nC @ 10 V
	Height	0.5mm
	Minimum Operating Temperature	-40 °C
	Forward Diode Voltage	1.3V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 86 A
	Maximum Drain Source Voltage 60 V
	Package Type DirectFET ISOMETRIC
	Series DirectFET, HEXFET
	Mounting Type Surface Mount
	Maximum Drain Source Resistance 7 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4.9V
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 89 W
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Width 5.05mm
	Length 6.35mm
	Typical Gate Charge @ Vgs 36 nC @ 10 V
	Height 0.5mm
	Minimum Operating Temperature -40 °C
	Forward Diode Voltage 1.3V

Infineon DirectFET, HEXFET N-Channel MOSFET, 86 A, 60 V DirectFET ISOMETRIC IRF6648TRPBF

FREE delivery for orders over £50.00

DirectFET® Power MOSFET, Infineon

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