Infineon DirectFET, HEXFET N-Channel MOSFET, 86 A, 60 V DirectFET ISOMETRIC IRF6648TRPBF
- RS Stock No.:
- 130-0948
- Mfr. Part No.:
- IRF6648TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£2.82
(exc. VAT)
£3.38
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 4,260 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £1.41 | £2.82 |
| 20 - 48 | £1.235 | £2.47 |
| 50 - 98 | £1.155 | £2.31 |
| 100 - 198 | £1.075 | £2.15 |
| 200 + | £0.99 | £1.98 |
*price indicative
- RS Stock No.:
- 130-0948
- Mfr. Part No.:
- IRF6648TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 86 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DirectFET ISOMETRIC | |
| Series | DirectFET, HEXFET | |
| Mounting Type | Surface Mount | |
| Maximum Drain Source Resistance | 7 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.9V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 89 W | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 5.05mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 36 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 6.35mm | |
| Minimum Operating Temperature | -40 °C | |
| Height | 0.5mm | |
| Forward Diode Voltage | 1.3V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 86 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DirectFET ISOMETRIC | ||
Series DirectFET, HEXFET | ||
Mounting Type Surface Mount | ||
Maximum Drain Source Resistance 7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.9V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 89 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 5.05mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 36 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 6.35mm | ||
Minimum Operating Temperature -40 °C | ||
Height 0.5mm | ||
Forward Diode Voltage 1.3V | ||
DirectFET® Power MOSFET, Infineon
The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.
Industry lowest on-resistance in their respective footprints
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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