Infineon DirectFET, HEXFET N-Channel MOSFET, 86 A, 60 V DirectFET ISOMETRIC IRF6648TRPBF

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£2.82

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£3.38

(inc. VAT)

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2 - 18£1.41£2.82
20 - 48£1.235£2.47
50 - 98£1.155£2.31
100 - 198£1.075£2.15
200 +£0.99£1.98

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Packaging Options:
RS Stock No.:
130-0948
Mfr. Part No.:
IRF6648TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

86 A

Maximum Drain Source Voltage

60 V

Package Type

DirectFET ISOMETRIC

Series

DirectFET, HEXFET

Mounting Type

Surface Mount

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

89 W

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

6.35mm

Typical Gate Charge @ Vgs

36 nC @ 10 V

Width

5.05mm

Minimum Operating Temperature

-40 °C

Height

0.5mm

Forward Diode Voltage

1.3V

DirectFET® Power MOSFET, Infineon


The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.

Industry lowest on-resistance in their respective footprints
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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