Infineon DirectFET, HEXFET N-Channel MOSFET, 375 A, 60 V DirectFET ISOMETRIC IRF7749L1TRPBF

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£10.18

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£12.216

(inc. VAT)

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Packaging Options:
RS Stock No.:
907-5205
Mfr. Part No.:
IRF7749L1TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

375 A

Maximum Drain Source Voltage

60 V

Series

DirectFET, HEXFET

Package Type

DirectFET ISOMETRIC

Mounting Type

Surface Mount

Maximum Drain Source Resistance

1.5 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

7.1mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

200 nC @ 10 V

Number of Elements per Chip

1

Length

9.15mm

Transistor Material

Si

Height

0.49mm

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

DirectFET® Power MOSFET, Infineon


The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.

Industry lowest on-resistance in their respective footprints
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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