Infineon DirectFET, HEXFET N-Channel MOSFET, 375 A, 60 V DirectFET ISOMETRIC IRF7749L1TRPBF
- RS Stock No.:
- 165-8086
- Mfr. Part No.:
- IRF7749L1TRPBF
- Brand:
- Infineon
Subtotal (1 reel of 4000 units)*
£6,272.00
(exc. VAT)
£7,528.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 4,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 4000 + | £1.568 | £6,272.00 |
*price indicative
- RS Stock No.:
- 165-8086
- Mfr. Part No.:
- IRF7749L1TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 375 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DirectFET ISOMETRIC | |
| Series | DirectFET, HEXFET | |
| Mounting Type | Surface Mount | |
| Maximum Drain Source Resistance | 1.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 125 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Width | 7.1mm | |
| Typical Gate Charge @ Vgs | 200 nC @ 10 V | |
| Length | 9.15mm | |
| Forward Diode Voltage | 1.3V | |
| Height | 0.49mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 375 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DirectFET ISOMETRIC | ||
Series DirectFET, HEXFET | ||
Mounting Type Surface Mount | ||
Maximum Drain Source Resistance 1.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Width 7.1mm | ||
Typical Gate Charge @ Vgs 200 nC @ 10 V | ||
Length 9.15mm | ||
Forward Diode Voltage 1.3V | ||
Height 0.49mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MX
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The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.
Industry lowest on-resistance in their respective footprints
Extremely low package resistance to minimise conduction losses
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Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm
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