N-Channel MOSFET, 375 A, 60 V DirectFET ISOMETRIC Infineon IRF7749L1TRPBF

RS Stock No.:: 165-8086
Mfr. Part No.:: IRF7749L1TRPBF
Brand:: Infineon

N-Channel MOSFET, 375 A, 60 V DirectFET ISOMETRIC Infineon IRF7749L1TRPBF

3968 In stock - FREE next working day delivery available

4000 In stock - FREE next working day delivery available

Price Each (On a Reel of 4000)

£1.87

(exc. VAT)

£2.24

(inc. VAT)

Units	Per unit	Per Reel*
4000 +	£1.87	£7,480.00

*price indicative

RS Stock No.:: 165-8086
Mfr. Part No.:: IRF7749L1TRPBF
Brand:: Infineon

Technical Reference

Legislation and Compliance

COO (Country of Origin):: MX

Product Details

DirectFET® Power MOSFET, Infineon

The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.

Industry lowest on-resistance in their respective footprints
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	375 A
Maximum Drain Source Voltage	60 V
Package Type	DirectFET ISOMETRIC
Series	DirectFET, HEXFET
Mounting Type	Surface Mount
Maximum Drain Source Resistance	1.5 mΩ
Channel Mode	Enhancement
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Width	7.1mm
Typical Gate Charge @ Vgs	200 nC @ 10 V
Length	9.15mm
Transistor Material	Si
Height	0.49mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.3V