Infineon OptiMOS 3 Type N-Channel MOSFET, 90 A, 40 V Enhancement, 3-Pin TO-220 IPP023N04NGXKSA1
- RS Stock No.:
- 124-8802
- Mfr. Part No.:
- IPP023N04NGXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£44.35
(exc. VAT)
£53.20
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 25 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £0.887 | £44.35 |
| 100 - 200 | £0.843 | £42.15 |
| 250 - 450 | £0.778 | £38.90 |
| 500 - 950 | £0.758 | £37.90 |
| 1000 + | £0.739 | £36.95 |
*price indicative
- RS Stock No.:
- 124-8802
- Mfr. Part No.:
- IPP023N04NGXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS 3 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 167W | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.95mm | |
| Length | 10.36mm | |
| Standards/Approvals | No | |
| Width | 4.57 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS 3 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 167W | ||
Maximum Operating Temperature 175°C | ||
Height 15.95mm | ||
Length 10.36mm | ||
Standards/Approvals No | ||
Width 4.57 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS™ -T2 Silicon N-Channel MOSFET 40 V, 3-Pin DPAK IPD90N04S4L04ATMA1
- Infineon OptiMOS™ -T2 N-Channel MOSFET 40 V, 3-Pin DPAK IPD90N04S403ATMA1
- Infineon OptiMOS™ -T2 N-Channel MOSFET 40 V, 3-Pin D2PAK IPB90N04S402ATMA1
- Infineon HEXFET N-Channel MOSFET 40 V TO-220AB IRF1018ESTRLPBF
- Nexperia N-Channel MOSFET 40 V SOT-669 PSMN5R8-40YS,115
- Infineon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 IPC90N04S5L3R3ATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 40 V, 3-Pin TO-220 IPP039N04LGXKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 40 V, 3-Pin TO-220 IPP048N04NGXKSA1