Infineon OptiMOS™ 3 N-Channel MOSFET, 90 A, 40 V, 3-Pin TO-220 IPP023N04NGXKSA1
- RS Stock No.:
- 124-8802
- Mfr. Part No.:
- IPP023N04NGXKSA1
- Brand:
- Infineon
Subtotal (1 tube of 50 units)*
£44.35
(exc. VAT)
£53.20
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 26 February 2026
Units | Per unit | Per Tube* |
---|---|---|
50 - 50 | £0.887 | £44.35 |
100 - 200 | £0.843 | £42.15 |
250 - 450 | £0.778 | £38.90 |
500 - 950 | £0.758 | £37.90 |
1000 + | £0.739 | £36.95 |
*price indicative
- RS Stock No.:
- 124-8802
- Mfr. Part No.:
- IPP023N04NGXKSA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 90 A | |
Maximum Drain Source Voltage | 40 V | |
Series | OptiMOS™ 3 | |
Package Type | TO-220 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 2.3 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 167 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Width | 4.57mm | |
Length | 10.36mm | |
Typical Gate Charge @ Vgs | 90 nC @ 10 V | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 15.95mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 90 A | ||
Maximum Drain Source Voltage 40 V | ||
Series OptiMOS™ 3 | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 167 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Width 4.57mm | ||
Length 10.36mm | ||
Typical Gate Charge @ Vgs 90 nC @ 10 V | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 15.95mm | ||
- COO (Country of Origin):
- CN
Infineon OptiMOS™3 Power MOSFETs, up to 40V
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
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