onsemi UltraFET N-Channel MOSFET, 10.6 A, 60 V, 8-Pin MLP8 FDMS5672
- RS Stock No.:
- 124-1701
- Mfr. Part No.:
- FDMS5672
- Brand:
- onsemi
Subtotal (1 reel of 3000 units)*
£4,296.00
(exc. VAT)
£5,154.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 02 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £1.432 | £4,296.00 |
*price indicative
- RS Stock No.:
- 124-1701
- Mfr. Part No.:
- FDMS5672
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10.6 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | UltraFET | |
| Package Type | MLP8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 12 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 6mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 5mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 32 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.75mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 10.6 A | ||
Maximum Drain Source Voltage 60 V | ||
Series UltraFET | ||
Package Type MLP8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 12 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 6mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 5mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 32 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 0.75mm | ||
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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