onsemi UltraFET N-Channel MOSFET, 20 A, 200 V, 8-Pin PQFN8 FDMS2672
- RS Stock No.:
- 864-4816
- Mfr. Part No.:
- FDMS2672
- Brand:
- onsemi
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£2.28
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£2.74
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- RS Stock No.:
- 864-4816
- Mfr. Part No.:
- FDMS2672
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 20 A | |
Maximum Drain Source Voltage | 200 V | |
Package Type | PQFN8 | |
Series | UltraFET | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 156 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 78 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Width | 6mm | |
Length | 5mm | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 30 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Minimum Operating Temperature | -55 °C | |
Height | 0.75mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type PQFN8 | ||
Series UltraFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 156 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 78 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 6mm | ||
Length 5mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 30 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 0.75mm | ||
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