onsemi UltraFET N-Channel MOSFET, 48 A, 80 V, 8-Pin PQFN8 FDMS3572

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Subtotal (1 pack of 5 units)*

£12.51

(exc. VAT)

£15.01

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45£2.502£12.51
50 - 95£2.156£10.78
100 +£1.87£9.35

*price indicative

Packaging Options:
RS Stock No.:
917-5469
Mfr. Part No.:
FDMS3572
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

48 A

Maximum Drain Source Voltage

80 V

Package Type

PQFN8

Series

UltraFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

29 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

78 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

5mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Transistor Material

Si

Width

6mm

Minimum Operating Temperature

-55 °C

Height

0.75mm

UltraFET® MOSFET, Fairchild Semiconductor


UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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