onsemi UltraFET N-Channel MOSFET, 14 A, 250 V, 8-Pin PQFN8 FDMS2734
- RS Stock No.:
- 759-9598
- Mfr. Part No.:
- FDMS2734
- Brand:
- onsemi
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£1.71
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£2.05
(inc. VAT)
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Units | Per unit |
---|---|
1 + | £1.71 |
*price indicative
- RS Stock No.:
- 759-9598
- Mfr. Part No.:
- FDMS2734
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 14 A | |
Maximum Drain Source Voltage | 250 V | |
Package Type | PQFN8 | |
Series | UltraFET | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 258 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 78 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Length | 5mm | |
Width | 6mm | |
Typical Gate Charge @ Vgs | 30 nC @ 10 V | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Height | 0.75mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 14 A | ||
Maximum Drain Source Voltage 250 V | ||
Package Type PQFN8 | ||
Series UltraFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 258 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 78 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 5mm | ||
Width 6mm | ||
Typical Gate Charge @ Vgs 30 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Height 0.75mm | ||
Minimum Operating Temperature -55 °C | ||
UltraFET® MOSFET, Fairchild Semiconductor
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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