UltraFET® MOSFET, Fairchild Semiconductor

UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	27 A
	Maximum Drain Source Voltage	150 V
	Package Type	PQFN8
	Series	UltraFET
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	103 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	78 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	31 nC @ 10 V
	Length	5mm
	Number of Elements per Chip	1
	Width	6mm
	Minimum Operating Temperature	-55 °C
	Height	0.75mm

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 27 A
	Maximum Drain Source Voltage 150 V
	Package Type PQFN8
	Series UltraFET
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 103 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 78 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 31 nC @ 10 V
	Length 5mm
	Number of Elements per Chip 1
	Width 6mm
	Minimum Operating Temperature -55 °C
	Height 0.75mm

onsemi UltraFET N-Channel MOSFET, 27 A, 150 V, 8-Pin PQFN8 FDMS2572

UltraFET® MOSFET, Fairchild Semiconductor

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