Microchip TC8220 Silicon N/P-Channel-Channel MOSFET, 2.3 A, 200 V, 12-Pin DFN TC8220K6-G
- RS Stock No.:
- 598-776
- Mfr. Part No.:
- TC8220K6-G
- Brand:
- Microchip
Subtotal (1 reel of 3300 units)*
£6,619.80
(exc. VAT)
£7,943.10
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 05 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
3300 + | £2.006 | £6,619.80 |
*price indicative
- RS Stock No.:
- 598-776
- Mfr. Part No.:
- TC8220K6-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Microchip | |
Channel Type | N, P | |
Maximum Continuous Drain Current | 2.3 A | |
Maximum Drain Source Voltage | 200 V | |
Package Type | DFN | |
Series | TC8220 | |
Mounting Type | Surface Mount | |
Pin Count | 12 | |
Channel Mode | Enhancement | |
Number of Elements per Chip | 1 | |
Transistor Material | Silicon | |
Select all | ||
---|---|---|
Brand Microchip | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 2.3 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type DFN | ||
Series TC8220 | ||
Mounting Type Surface Mount | ||
Pin Count 12 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
- COO (Country of Origin):
- CN
The Microchip High-voltage, low-threshold N-channel and P-channel MOSFETs in a 12-lead DFN package feature integrated gate-to-source resistors and gate-to-source Zener diode clamps, ideal for high-voltage pulser applications. These complementary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pairs utilize an advanced vertical DMOS structure along with Supertexs proven silicon-gate manufacturing process. This combination offers the power handling capabilities of bipolar transistors, while also providing the high input impedance and positive temperature coefficient typical of MOS devices.
Integrated gate to source resistor
Integrated gate to source Zener diode
Low threshold, low on-resistance
Low input and output capacitance
Fast switching speeds
Integrated gate to source Zener diode
Low threshold, low on-resistance
Low input and output capacitance
Fast switching speeds
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