Microchip TC8220 Silicon N/P-Channel-Channel MOSFET, 2.3 A, 200 V, 12-Pin DFN TC8220K6-G

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Subtotal (1 reel of 3300 units)*

£6,619.80

(exc. VAT)

£7,943.10

(inc. VAT)

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Units
Per unit
Per Reel*
3300 +£2.006£6,619.80

*price indicative

RS Stock No.:
598-776
Mfr. Part No.:
TC8220K6-G
Brand:
Microchip
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Brand

Microchip

Channel Type

N, P

Maximum Continuous Drain Current

2.3 A

Maximum Drain Source Voltage

200 V

Package Type

DFN

Series

TC8220

Mounting Type

Surface Mount

Pin Count

12

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

Silicon

COO (Country of Origin):
CN
The Microchip High-voltage, low-threshold N-channel and P-channel MOSFETs in a 12-lead DFN package feature integrated gate-to-source resistors and gate-to-source Zener diode clamps, ideal for high-voltage pulser applications. These complementary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pairs utilize an advanced vertical DMOS structure along with Supertex’s proven silicon-gate manufacturing process. This combination offers the power handling capabilities of bipolar transistors, while also providing the high input impedance and positive temperature coefficient typical of MOS devices.

Integrated gate to source resistor
Integrated gate to source Zener diode
Low threshold, low on-resistance
Low input and output capacitance
Fast switching speeds

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