Infineon Dual OptiMOS 1 Type P, Type N-Channel MOSFET Arrays, 2.3 A, 30 V Enhancement, 6-Pin TSOP BSL308CH6327XTSA1
- RS Stock No.:
- 214-4335
- Distrelec Article No.:
- 304-39-398
- Mfr. Part No.:
- BSL308CH6327XTSA1
- Brand:
- Infineon
Subtotal (1 pack of 50 units)*
£13.55
(exc. VAT)
£16.25
(inc. VAT)
FREE delivery for orders over £60.00
- Plus 11,250 unit(s) shipping from 24 August 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 50 + | £0.271 | £13.55 |
*price indicative
- RS Stock No.:
- 214-4335
- Distrelec Article No.:
- 304-39-398
- Mfr. Part No.:
- BSL308CH6327XTSA1
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET Arrays | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSOP | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 57mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 0.6W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | -5nC | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Standards/Approvals | IEC61249-2-21, RoHS | |
| Length | 2.9mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET Arrays | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSOP | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 57mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 0.6W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs -5nC | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Standards/Approvals IEC61249-2-21, RoHS | ||
Length 2.9mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS Series MOSFET Arrays, 30V Maximum Drain Source Voltage, 2.3A Maximum Continuous Drain Current - BSL308CH6327XTSA1
Features and Benefits:
• Maximum continuous drain current 2.3A enables moderate load handling
• Maximum Vds 30V supports 30V system architectures
• Maximum gate‑source voltage 20V protects gate integrity under transients
• Forward voltage 1.1V improves efficiency in diode conduction paths
• Rated to 150°C allows reliable operation at elevated junction temperatures
Applications
• Ideal for high‑density DC-DC converter switch stages
• Used with battery management circuits in vehicles and equipment
• Can be used for motor driver low‑side or high‑side switching
• Suitable for compact power distribution on surface‑mount PCBs
What mounting type is required for board assembly?
How does it behave across temperature extremes?
Are there separate transistor elements per chip?
What standards and material compliance are indicated?
Related links
- Infineon Dual OptiMOS 1 Type P 2.3 A 6-Pin TSOP
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- Infineon Dual OptiMOS 2 Type N-Channel MOSFET Arrays 60 V Enhancement, 8-Pin TDSON IPG20N06S4L26AATMA1
- Infineon Dual OptiMOS Type N-Channel MOSFET 55 V Enhancement, 8-Pin TDSON
- Infineon Dual OptiMOS 2 Type N-Channel Power Transistor 55 V Enhancement, 8-Pin TDSON
- Infineon Dual OptiMOS 2 Type N-Channel MOSFET 55 V Enhancement, 8-Pin DSO
- Infineon Dual OptiMOS-T2 2 Type N-Channel Power Transistor 100 V Enhancement, 8-Pin TDSON
- Infineon Dual OptiMOS 2 Type N-Channel MOSFET & Diode 100 V Enhancement, 8-Pin TDSON


