Microchip TC6320 Silicon N/P-Channel-Channel MOSFET, 2 A, 200 V, 8-Pin VDFN TC6320K6-G
- RS Stock No.:
- 598-279
- Mfr. Part No.:
- TC6320K6-G
- Brand:
- Microchip
Subtotal (1 reel of 3300 units)*
£4,524.30
(exc. VAT)
£5,428.50
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 05 December 2025
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Units | Per unit | Per Reel* |
---|---|---|
3300 + | £1.371 | £4,524.30 |
*price indicative
- RS Stock No.:
- 598-279
- Mfr. Part No.:
- TC6320K6-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Microchip | |
Channel Type | N, P | |
Maximum Continuous Drain Current | 2 A | |
Maximum Drain Source Voltage | 200 V | |
Package Type | VDFN | |
Series | TC6320 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Channel Mode | Enhancement | |
Transistor Material | Silicon | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Microchip | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 2 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type VDFN | ||
Series TC6320 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- TH
The Microchip High-voltage, low-threshold N-channel and P-channel MOSFETs in 8-lead VDFN and SOIC packages feature integrated gate-to-source resistors and gate-to-source Zener diode clamps, making them ideal for high-voltage pulser applications. This complementary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pair uses an advanced vertical DMOS structure and a proven silicon gate manufacturing process. The combination offers the power handling capabilities of bipolar transistors along with the high input impedance and positive temperature coefficient typical of MOS devices. As with all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown.
Low threshold
Low on resistance
Low input capacitance
Fast switching speeds
Free from secondary breakdown
Low input and output leakage
Low on resistance
Low input capacitance
Fast switching speeds
Free from secondary breakdown
Low input and output leakage
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