Microchip TC6320 Silicon N/P-Channel-Channel MOSFET, 2 A, 200 V, 8-Pin VDFN TC6320K6-G

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Subtotal (1 reel of 3300 units)*

£4,524.30

(exc. VAT)

£5,428.50

(inc. VAT)

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Units
Per unit
Per Reel*
3300 +£1.371£4,524.30

*price indicative

RS Stock No.:
598-279
Mfr. Part No.:
TC6320K6-G
Brand:
Microchip
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Brand

Microchip

Channel Type

N, P

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

200 V

Package Type

VDFN

Series

TC6320

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

Silicon

Number of Elements per Chip

1

COO (Country of Origin):
TH
The Microchip High-voltage, low-threshold N-channel and P-channel MOSFETs in 8-lead VDFN and SOIC packages feature integrated gate-to-source resistors and gate-to-source Zener diode clamps, making them ideal for high-voltage pulser applications. This complementary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pair uses an advanced vertical DMOS structure and a proven silicon gate manufacturing process. The combination offers the power handling capabilities of bipolar transistors along with the high input impedance and positive temperature coefficient typical of MOS devices. As with all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown.

Low threshold
Low on resistance
Low input capacitance
Fast switching speeds
Free from secondary breakdown
Low input and output leakage

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