Microchip TC1550 Silicon N/P-Channel-Channel MOSFET, 350 mA, 500 V, 8-Pin SOIC TC1550TG-G
- RS Stock No.:
- 598-873
- Mfr. Part No.:
- TC1550TG-G
- Brand:
- Microchip
Subtotal (1 reel of 3300 units)*
£19,809.90
(exc. VAT)
£23,773.20
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 01 December 2025
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Units | Per unit | Per Reel* |
---|---|---|
3300 + | £6.003 | £19,809.90 |
*price indicative
- RS Stock No.:
- 598-873
- Mfr. Part No.:
- TC1550TG-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Microchip | |
Channel Type | N, P | |
Maximum Continuous Drain Current | 350 mA | |
Maximum Drain Source Voltage | 500 V | |
Package Type | SOIC | |
Series | TC1550 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Channel Mode | Enhancement | |
Transistor Material | Silicon | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Microchip | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 350 mA | ||
Maximum Drain Source Voltage 500 V | ||
Package Type SOIC | ||
Series TC1550 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
The Microchip High voltage N-channel and P-channel MOSFET in an 8-lead SOIC package is an enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and Supertexs proven silicon-gate manufacturing process. This combination offers the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient typical of MOS devices. As with all MOS structures, this device is immune to thermal runaway and thermally induced secondary breakdown, ensuring reliable performance.
Low input capacitance
Fast switching speeds
Free from secondary breakdowns
Low input and output leakage
Fast switching speeds
Free from secondary breakdowns
Low input and output leakage
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