Microchip TC7920 Silicon N/P-Channel-Channel MOSFET, 1.8 A, 200 V, 12-Pin DFN TC7920K6-G

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Subtotal (1 reel of 3300 units)*

£6,428.40

(exc. VAT)

£7,715.40

(inc. VAT)

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Units
Per unit
Per Reel*
3300 +£1.948£6,428.40

*price indicative

RS Stock No.:
598-568
Mfr. Part No.:
TC7920K6-G
Brand:
Microchip
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Brand

Microchip

Channel Type

N, P

Maximum Continuous Drain Current

1.8 A

Maximum Drain Source Voltage

200 V

Package Type

DFN

Series

TC7920

Mounting Type

Surface Mount

Pin Count

12

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

Silicon

COO (Country of Origin):
CN
The Microchip High voltage, low-threshold N-channel and P-channel MOSFETs in a 12-lead DFN package feature integrated output drain high-voltage diodes, gate-to-source resistors, and gate-to-source Zener diode clamps, making them ideal for high-voltage pulser applications. These complementary, high-speed, high-voltage, gate-clamped MOSFET pairs use an advanced vertical DMOS structure and a proven silicon-gate manufacturing process. This combination delivers the power handling capabilities of bipolar transistors, along with the high input impedance and positive temperature coefficient characteristic of MOS devices.

Integrated gate to source resistor
Integrated gate to source Zener diode
Low threshold, low on-resistance
Low input and output capacitance
Fast switching speeds

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