MPN

Infineon IGLT65 Type N-Channel MOSFET, 15 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R110D2ATMA1

RS Stock No.:: 351-885
Mfr. Part No.:: IGLT65R110D2ATMA1
Brand:: Infineon

Infineon IGLT65 Type N-Channel MOSFET, 15 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R110D2ATMA1

Bulk discount available

Subtotal (1 pack of 2 units)*

£6.60

(exc. VAT)

£7.92

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 22 June 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
2 - 18	£3.30	£6.60
20 - 198	£2.975	£5.95
200 - 998	£2.74	£5.48
1000 - 1998	£2.54	£5.08
2000 +	£2.28	£4.56

*price indicative

RS Stock No.:: 351-885
Mfr. Part No.:: IGLT65R110D2ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	15A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PG-HDSOP-16
	Series	IGLT65
	Mount Type	Surface
	Pin Count	16
	Maximum Drain Source Resistance Rds	0.14Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	10 V
	Maximum Power Dissipation Pd	55W
	Typical Gate Charge Qg @ Vgs	2.4nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC for Industrial Applications
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 15A
	Maximum Drain Source Voltage Vds 650V
	Package Type PG-HDSOP-16
	Series IGLT65
	Mount Type Surface
	Pin Count 16
	Maximum Drain Source Resistance Rds 0.14Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 10 V
	Maximum Power Dissipation Pd 55W
	Typical Gate Charge Qg @ Vgs 2.4nC
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC for Industrial Applications
	Automotive Standard No

Datasheet - IGLT65R110D2ATMA1

COO (Country of Origin):: MY

The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications.

650 V e-mode power transistor

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

Low dynamic RDS(on)

High ESD robustness: 2 kV HBM - 1 kV CDM

Top-side cooled package

JEDEC qualified (JESD47, JESD22)