Infineon IGLT65 GaN N-Channel MOSFET Transistor, 15 A, 650 V, 16-Pin PG-HDSOP-16 IGLT65R110D2ATMA1

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Subtotal (1 pack of 2 units)*

£7.06

(exc. VAT)

£8.48

(inc. VAT)

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Per Pack*
2 - 18£3.53£7.06
20 - 198£3.18£6.36
200 - 998£2.93£5.86
1000 - 1998£2.72£5.44
2000 +£2.435£4.87

*price indicative

RS Stock No.:
351-885
Mfr. Part No.:
IGLT65R110D2ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

650 V

Package Type

PG-HDSOP-16

Series

IGLT65

Mounting Type

Surface Mount

Pin Count

16

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

GaN

COO (Country of Origin):
MY
The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications.

650 V e-mode power transistor
Ultrafast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Low dynamic RDS(on)
High ESD robustness: 2 kV HBM - 1 kV CDM
Top-side cooled package
JEDEC qualified (JESD47, JESD22)

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