Name: Infineon IGLT65 GaN N-Channel MOSFET Transistor, 31 A, 650 V, 16-Pin PG-HDSOP-16 IGLT65R055D2ATMA1
Brand: Infineon
SKU: 351-886
Price: 7.40 GBP
Availability: OutOfStock

The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications.

650 V e-mode power transistor
Ultrafast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Low dynamic RDS(on)
High ESD robustness: 2 kV HBM - 1 kV CDM
Top-side cooled package
JEDEC qualified (JESD47, JESD22)

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	31 A
	Maximum Drain Source Voltage	650 V
	Series	IGLT65
	Package Type	PG-HDSOP-16
	Mounting Type	Surface Mount
	Pin Count	16
	Channel Mode	Enhancement
	Transistor Material	GaN
	Number of Elements per Chip	1

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 31 A
	Maximum Drain Source Voltage 650 V
	Series IGLT65
	Package Type PG-HDSOP-16
	Mounting Type Surface Mount
	Pin Count 16
	Channel Mode Enhancement
	Transistor Material GaN
	Number of Elements per Chip 1

Infineon IGLT65 GaN N-Channel MOSFET Transistor, 31 A, 650 V, 16-Pin PG-HDSOP-16 IGLT65R055D2ATMA1

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