Infineon IGLT65 GaN N-Channel MOSFET Transistor, 31 A, 650 V, 16-Pin PG-HDSOP-16 IGLT65R055D2ATMA1

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£6.17

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£7.40

(inc. VAT)

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RS Stock No.:
351-886
Mfr. Part No.:
IGLT65R055D2ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

650 V

Series

IGLT65

Package Type

PG-HDSOP-16

Mounting Type

Surface Mount

Pin Count

16

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

GaN

COO (Country of Origin):
MY
The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications.

650 V e-mode power transistor
Ultrafast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Low dynamic RDS(on)
High ESD robustness: 2 kV HBM - 1 kV CDM
Top-side cooled package
JEDEC qualified (JESD47, JESD22)

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