Infineon IGLT65 GaN N-Channel MOSFET Transistor, 67 A, 650 V, 16-Pin PG-HDSOP-16 IGLT65R025D2AUMA1
- RS Stock No.:
- 351-891
- Mfr. Part No.:
- IGLT65R025D2AUMA1
- Brand:
- Infineon
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Subtotal (1 unit)*
£13.19
(exc. VAT)
£15.83
(inc. VAT)
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- Shipping from 09 March 2026
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Units | Per unit |
|---|---|
| 1 - 9 | £13.19 |
| 10 - 99 | £11.87 |
| 100 + | £10.95 |
*price indicative
- RS Stock No.:
- 351-891
- Mfr. Part No.:
- IGLT65R025D2AUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 67 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | IGLT65 | |
| Package Type | PG-HDSOP-16 | |
| Mounting Type | Surface Mount | |
| Pin Count | 16 | |
| Channel Mode | Enhancement | |
| Transistor Material | GaN | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 67 A | ||
Maximum Drain Source Voltage 650 V | ||
Series IGLT65 | ||
Package Type PG-HDSOP-16 | ||
Mounting Type Surface Mount | ||
Pin Count 16 | ||
Channel Mode Enhancement | ||
Transistor Material GaN | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- MY
The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications.
650 V e-mode power transistor
Ultrafast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Low dynamic RDS(on)
High ESD robustness: 2 kV HBM - 1 kV CDM
Top-side cooled package
JEDEC qualified (JESD47, JESD22)
Ultrafast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Low dynamic RDS(on)
High ESD robustness: 2 kV HBM - 1 kV CDM
Top-side cooled package
JEDEC qualified (JESD47, JESD22)
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