Infineon OptiMOS Type N-Channel MOSFET, 72 A, 650 V Enhancement, 10-Pin PG-HDSOP-10 IPDD60R037CM8XTMA1

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RS Stock No.:
348-990
Mfr. Part No.:
IPDD60R037CM8XTMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

72A

Maximum Drain Source Voltage Vds

650V

Package Type

PG-HDSOP-10

Series

OptiMOS

Mount Type

Surface

Pin Count

10

Maximum Drain Source Resistance Rds

37mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

79nC

Maximum Power Dissipation Pd

416W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon CoolMOS 8th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS CM8 series is the successor to the CoolMOS 7. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g low ringing tendency, implemented fast body diode for all products with outstanding robustness against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses of CM8, make switching applications even more efficient.

Suitable for hard and soft switching topologies

Ease of use and fast design in through low ringing tendency

Simplified thermal management thanks to our advanced die attach technique

Suitable for a wide variety of applications and power ranges

Increased power density solutions enabled by using products with smaller footprint

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