Infineon HEXFET Type N-Channel MOSFET, 1.2 A, 30 V Enhancement, 3-Pin SOT-23 IRLML2803TRPBF

RS Stock No.:: 302-022
Mfr. Part No.:: IRLML2803TRPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 1.2 A, 30 V Enhancement, 3-Pin SOT-23 IRLML2803TRPBF

Bulk discount available

Subtotal (1 pack of 5 units)*

£1.32

(exc. VAT)

£1.585

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

805 unit(s) ready to ship
Plus 245 unit(s) ready to ship from another location
Plus 1,755 unit(s) shipping from 06 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 45	£0.264	£1.32
50 - 245	£0.222	£1.11
250 - 495	£0.172	£0.86
500 - 1245	£0.136	£0.68
1250 +	£0.118	£0.59

*price indicative

RS Stock No.:: 302-022
Mfr. Part No.:: IRLML2803TRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	1.2A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	250mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	3.3nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	540mW
	Maximum Operating Temperature	150°C
	Height	1.02mm
	Width	1.4 mm
	Length	3.04mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101
	Distrelec Product Id	304-36-995

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 1.2A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 250mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 3.3nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 540mW
	Maximum Operating Temperature 150°C
	Height 1.02mm
	Width 1.4 mm
	Length 3.04mm
	Standards/Approvals No
	Automotive Standard AEC-Q101
	Distrelec Product Id 304-36-995

Infineon HEXFET Series MOSFET, 1.2A Maximum Continuous Drain Current, 540 mW Maximum Power Dissipation - IRLML2803TRPBF

This N-channel MOSFET delivers enhanced performance and reliability for a range of electronic applications. Designed with Hexfet technology, it operates efficiently in surface mount configurations, making it suitable for compact designs in the automation and electrical sectors. The combination of low RDS(on) and a high continuous drain current supports optimal power management in various conditions.

Features & Benefits

• Supports a maximum continuous drain current of 1.2A for effective performance

• High maximum drain-source voltage of 30V allows for versatile usage

• Low maximum drain-source resistance of 250mΩ minimises power losses

• Enhancement mode operation enables efficient switching capabilities

• Compact SOT-23 package is ideal for space-constrained applications

• Operates at high temperatures, with a maximum operating temperature of +150°C

Applications

• Utilised in DC-DC converters for effective energy management

• Employed in motor control circuits for improved precision

• Suitable for power supply switching in consumer electronics

• Integrated into automation systems for efficient load management

What is the optimal gate voltage for operation?

The optimal gate voltage for this device is +10V, allowing for efficient switching and performance.

How does it perform in high temperatures?

This component can function at temperatures up to +150°C, ensuring reliability in thermal conditions.

Can it handle pulsed drain currents?

Yes, it supports pulsed drain currents significantly above continuous ratings, accommodating short current surges.

What mounting type is recommended for this device?

Surface mount is the recommended type, as it provides better thermal performance and space efficiency in circuit designs.

What precautions should be taken during installation?

Proper thermal management and adherence to maximum ratings are necessary to prevent damage during operation.

Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency

Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.

Explore the Infineon range today