MPN

Infineon HEXFET N-Channel MOSFET, 1.2 A, 30 V, 3-Pin SOT-23 IRLML2803TRPBF

RS Stock No.:: 302-022
Mfr. Part No.:: IRLML2803TRPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 1.2 A, 30 V, 3-Pin SOT-23 IRLML2803TRPBF

Bulk discount available

Subtotal (1 pack of 5 units)*

£1.32

(exc. VAT)

£1.585

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

1,295 unit(s) ready to ship
Plus 145 unit(s) ready to ship from another location
Plus 5,810 unit(s) shipping from 08 October 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 45	£0.264	£1.32
50 - 245	£0.222	£1.11
250 - 495	£0.172	£0.86
500 - 1245	£0.136	£0.68
1250 +	£0.118	£0.59

*price indicative

RS Stock No.:: 302-022
Mfr. Part No.:: IRLML2803TRPBF
Brand:: Infineon

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	1.2 A
	Maximum Drain Source Voltage	30 V
	Package Type	SOT-23
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	250 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	540 mW
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	3.3 nC @ 10 V
	Transistor Material	Si
	Number of Elements per Chip	1
	Length	3.04mm
	Width	1.4mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.2V
	Height	1.02mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 1.2 A
	Maximum Drain Source Voltage 30 V
	Package Type SOT-23
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 250 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 540 mW
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 3.3 nC @ 10 V
	Transistor Material Si
	Number of Elements per Chip 1
	Length 3.04mm
	Width 1.4mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.2V
	Height 1.02mm

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 1.2A Maximum Continuous Drain Current, 540 mW Maximum Power Dissipation - IRLML2803TRPBF

This N-channel MOSFET delivers enhanced performance and reliability for a range of electronic applications. Designed with Hexfet technology, it operates efficiently in surface mount configurations, making it suitable for compact designs in the automation and electrical sectors. The combination of low RDS(on) and a high continuous drain current supports optimal power management in various conditions.

Features & Benefits

• Supports a maximum continuous drain current of 1.2A for effective performance
• High maximum drain-source voltage of 30V allows for versatile usage
• Low maximum drain-source resistance of 250mΩ minimises power losses
• Enhancement mode operation enables efficient switching capabilities
• Compact SOT-23 package is ideal for space-constrained applications
• Operates at high temperatures, with a maximum operating temperature of +150°C

Applications

• Utilised in DC-DC converters for effective energy management
• Employed in motor control circuits for improved precision
• Suitable for power supply switching in consumer electronics
• Integrated into automation systems for efficient load management

What is the optimal gate voltage for operation?

The optimal gate voltage for this device is +10V, allowing for efficient switching and performance.

How does it perform in high temperatures?

This component can function at temperatures up to +150°C, ensuring reliability in thermal conditions.

Can it handle pulsed drain currents?

Yes, it supports pulsed drain currents significantly above continuous ratings, accommodating short current surges.

What mounting type is recommended for this device?

Surface mount is the recommended type, as it provides better thermal performance and space efficiency in circuit designs.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Be the first to know about our latest products and services

Join our mailing list today:

The personal information you provide to us when signing up to the mailing list will be processed in line with our privacy policy.