Infineon HEXFET Type N-Channel MOSFET, 1.2 A, 30 V Enhancement, 3-Pin SOT-23 IRLML2803TRPBF
- RS Stock No.:
- 302-022
- Distrelec Article No.:
- 304-36-995
- Mfr. Part No.:
- IRLML2803TRPBF
- Brand:
- Infineon
Subtotal (1 pack of 5 units)*
£1.32
(exc. VAT)
£1.585
(inc. VAT)
FREE delivery for orders over £50.00
- 805 unit(s) ready to ship
- Plus 245 unit(s) ready to ship from another location
- Plus 1,535 unit(s) shipping from 28 January 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.264 | £1.32 |
| 50 - 245 | £0.222 | £1.11 |
| 250 - 495 | £0.172 | £0.86 |
| 500 - 1245 | £0.136 | £0.68 |
| 1250 + | £0.118 | £0.59 |
*price indicative
- RS Stock No.:
- 302-022
- Distrelec Article No.:
- 304-36-995
- Mfr. Part No.:
- IRLML2803TRPBF
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 540mW | |
| Typical Gate Charge Qg @ Vgs | 3.3nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Width | 1.4 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 540mW | ||
Typical Gate Charge Qg @ Vgs 3.3nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.02mm | ||
Width 1.4 mm | ||
Automotive Standard AEC-Q101 | ||
Infineon HEXFET Series MOSFET, 1.2A Maximum Continuous Drain Current, 540 mW Maximum Power Dissipation - IRLML2803TRPBF
Features & Benefits
Applications
What is the optimal gate voltage for operation?
How does it perform in high temperatures?
Can it handle pulsed drain currents?
What mounting type is recommended for this device?
What precautions should be taken during installation?
Related links
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
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- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23


