Infineon HEXFET N-Channel MOSFET, 1.2 A, 20 V, 3-Pin SOT-23 IRLML2402TRPBF
- RS Stock No.:
- 302-016
- Mfr. Part No.:
- IRLML2402TRPBF
- Brand:
- Infineon
Subtotal (1 pack of 5 units)*
£0.74
(exc. VAT)
£0.89
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 120 unit(s) ready to ship
- Plus 80 unit(s) ready to ship from another location
- Plus 228,940 unit(s) shipping from 30 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | £0.148 | £0.74 |
*price indicative
- RS Stock No.:
- 302-016
- Mfr. Part No.:
- IRLML2402TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.2 A | |
| Maximum Drain Source Voltage | 20 V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 250 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 0.7V | |
| Minimum Gate Threshold Voltage | 0.7V | |
| Maximum Power Dissipation | 540 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 1.4mm | |
| Typical Gate Charge @ Vgs | 2.6 nC @ 4.5 V | |
| Length | 3.04mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.02mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.2 A | ||
Maximum Drain Source Voltage 20 V | ||
Series HEXFET | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 250 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 0.7V | ||
Minimum Gate Threshold Voltage 0.7V | ||
Maximum Power Dissipation 540 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 1.4mm | ||
Typical Gate Charge @ Vgs 2.6 nC @ 4.5 V | ||
Length 3.04mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1.02mm | ||
N-Channel Power MOSFET 12V to 25V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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