Infineon HEXFET N-Channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 IRLML2060TRPBF
- RS Stock No.:
- 913-4058
- Mfr. Part No.:
- IRLML2060TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 3000 units)*
£177.00
(exc. VAT)
£213.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 27,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | £0.059 | £177.00 |
| 6000 - 6000 | £0.056 | £168.00 |
| 9000 + | £0.053 | £159.00 |
*price indicative
- RS Stock No.:
- 913-4058
- Mfr. Part No.:
- IRLML2060TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.2 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-23 | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 480 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 1.25 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Number of Elements per Chip | 1 | |
| Width | 1.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 0.67 nC @ 4.5 V | |
| Length | 3.04mm | |
| Transistor Material | Si | |
| Height | 1.02mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.2 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 480 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.25 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Number of Elements per Chip 1 | ||
Width 1.4mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 0.67 nC @ 4.5 V | ||
Length 3.04mm | ||
Transistor Material Si | ||
Height 1.02mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- PH
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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