Infineon HEXFET N-Channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 IRLML2060TRPBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

1.2 A

Maximum Drain Source Voltage

60 V

Series

HEXFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

480 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Number of Elements per Chip

1

Width

1.4mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.04mm

Typical Gate Charge @ Vgs

0.67 nC @ 4.5 V

Height

1.02mm

Minimum Operating Temperature

-55 °C