N-Channel MOSFET, 12 A, 100 V, 3-Pin TO-220AB ON Semiconductor RFP12N10L

Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 12 A
Maximum Drain Source Voltage 100 V
Maximum Drain Source Resistance 200 mΩ
Minimum Gate Threshold Voltage 1V
Maximum Gate Source Voltage -10 V, +10 V
Package Type TO-220AB
Mounting Type Through Hole
Transistor Configuration Single
Pin Count 3
Channel Mode Enhancement
Maximum Power Dissipation 60 W
Height 9.4mm
Maximum Operating Temperature +150 °C
Transistor Material Si
Length 10.67mm
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Width 4.83mm
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25 - 99
£0.49
100 - 249
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250 - 499
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