RFP12N10L N-Channel MOSFET, 12 A, 100 V, 3-Pin TO-220AB ON Semiconductor

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Product Details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, Fairchild Semiconductor

Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 12 A
Maximum Drain Source Voltage 100 V
Maximum Drain Source Resistance 200 mΩ
Minimum Gate Threshold Voltage 1V
Maximum Gate Source Voltage -10 V, +10 V
Package Type TO-220AB
Mounting Type Through Hole
Transistor Configuration Single
Pin Count 3
Channel Mode Enhancement
Category Power MOSFET
Maximum Power Dissipation 60 W
Dimensions 10.67 x 4.83 x 9.4mm
Typical Turn-Off Delay Time 100 ns
Transistor Material Si
Typical Turn-On Delay Time 15 ns
Minimum Operating Temperature -55 °C
Length 10.67mm
Typical Input Capacitance @ Vds 900 pF@ 25 V
Width 4.83mm
Number of Elements per Chip 1
Height 9.4mm
Maximum Operating Temperature +150 °C
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25 - 99
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250 - 499
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500 +
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