onsemi PowerTrench N-Channel MOSFET, 12 A, 100 V, 3-Pin D2PAK FDB3632
- RS Stock No.:
- 124-1695
- Mfr. Part No.:
- FDB3632
- Brand:
- onsemi
Subtotal (1 reel of 800 units)*
£1,071.20
(exc. VAT)
£1,285.60
(inc. VAT)
FREE delivery for orders over £50.00
- 800 left, ready to ship
Units | Per unit | Per Reel* |
---|---|---|
800 + | £1.339 | £1,071.20 |
*price indicative
- RS Stock No.:
- 124-1695
- Mfr. Part No.:
- FDB3632
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 12 A | |
Maximum Drain Source Voltage | 100 V | |
Series | PowerTrench | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 9 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 310 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Width | 9.65mm | |
Typical Gate Charge @ Vgs | 84 nC @ 10 V | |
Length | 10.67mm | |
Maximum Operating Temperature | +175 °C | |
Height | 4.83mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 100 V | ||
Series PowerTrench | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 9 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 310 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 9.65mm | ||
Typical Gate Charge @ Vgs 84 nC @ 10 V | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- DE
Automotive N-Channel MOSFET, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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