onsemi PowerTrench N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK FDB035N10A
- RS Stock No.:
- 802-3200
- Mfr. Part No.:
- FDB035N10A
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 2 units)*
£10.75
(exc. VAT)
£12.90
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 52 unit(s) ready to ship
- Plus 160 unit(s) shipping from 10 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £5.375 | £10.75 |
| 20 - 198 | £4.635 | £9.27 |
| 200 + | £4.015 | £8.03 |
*price indicative
- RS Stock No.:
- 802-3200
- Mfr. Part No.:
- FDB035N10A
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | PowerTrench | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3.5 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 333 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Length | 10.67mm | |
| Typical Gate Charge @ Vgs | 89 nC @ 10 V | |
| Width | 9.65mm | |
| Height | 4.83mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 100 V | ||
Series PowerTrench | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.5 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 333 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 89 nC @ 10 V | ||
Width 9.65mm | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
Related links
- onsemi PowerTrench N-Channel MOSFET 100 V, 3-Pin D2PAK FDB035N10A
- onsemi PowerTrench N-Channel MOSFET 75 V, 3-Pin D2PAK FDB088N08
- onsemi PowerTrench N-Channel MOSFET 313 A 3-Pin TO-220 FDP020N06B_F102
- onsemi PowerTrench N-Channel MOSFET 193 A 3-Pin TO-220 FDP030N06
- onsemi PowerTrench N-Channel MOSFET 100 V, 3-Pin D2PAK FDB3632
- onsemi PowerTrench N-Channel MOSFET 150 V, 3-Pin D2PAK FDB110N15A
- onsemi PowerTrench N-Channel MOSFET 150 V, 3-Pin D2PAK FDB2572
- onsemi PowerTrench N-Channel MOSFET 200 V, 3-Pin D2PAK FDB2614