Vishay P-Channel MOSFET, 12 A, 100 V, 3-Pin TO-220AB IRF9530PBF
- RS Stock No.:
- 708-5159
- Mfr. Part No.:
- IRF9530PBF
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
£7.11
(exc. VAT)
£8.53
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 75 unit(s) shipping from 13 October 2025
- Plus 60 unit(s) shipping from 13 October 2025
- Plus 310 unit(s) shipping from 20 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.422 | £7.11 |
| 50 - 120 | £1.21 | £6.05 |
| 125 - 245 | £1.138 | £5.69 |
| 250 - 495 | £1.066 | £5.33 |
| 500 + | £0.994 | £4.97 |
*price indicative
- RS Stock No.:
- 708-5159
- Mfr. Part No.:
- IRF9530PBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 12 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 300 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 88 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 38 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.41mm | |
| Number of Elements per Chip | 1 | |
| Width | 4.7mm | |
| Transistor Material | Si | |
| Height | 9.01mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 300 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 88 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 38 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.41mm | ||
Number of Elements per Chip 1 | ||
Width 4.7mm | ||
Transistor Material Si | ||
Height 9.01mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
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