Vishay P-Channel MOSFET, 1.8 A, 200 V, 3-Pin TO-220AB IRF9610PBF

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Subtotal (1 tube of 50 units)*

£43.60

(exc. VAT)

£52.30

(inc. VAT)

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  • 1,000 unit(s) ready to ship
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Units
Per unit
Per Tube*
50 - 50£0.872£43.60
100 - 200£0.741£37.05
250 +£0.697£34.85

*price indicative

RS Stock No.:
178-0837
Mfr. Part No.:
IRF9610PBF
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.8 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

11 nC @ 10 V

Length

10.41mm

Number of Elements per Chip

1

Width

4.7mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.01mm

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor


The Vishay power MOSFETs technology is the key to advanced line of power MOSFET transistors. The efficient geometry and unique processing of the power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

Dynamic dV/dt rating
Ease of paralleling
Simple drive requirements


MOSFET Transistors, Vishay Semiconductor

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