Vishay P-Channel MOSFET, 1.8 A, 200 V, 3-Pin TO-220AB IRF9610PBF

View all MOSFETs
Save 20% when you buy 250 units

Subtotal (1 tube of 50 units)*

£43.60

(exc. VAT)

£52.30

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 1,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
50 - 50£0.872£43.60
100 - 200£0.741£37.05
250 +£0.697£34.85

*price indicative

RS Stock No.:
178-0837
Mfr. Part No.:
IRF9610PBF
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.8 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

10.41mm

Typical Gate Charge @ Vgs

11 nC @ 10 V

Transistor Material

Si

Width

4.7mm

Number of Elements per Chip

1

Height

9.01mm

Minimum Operating Temperature

-55 °C

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor


The Vishay power MOSFETs technology is the key to advanced line of power MOSFET transistors. The efficient geometry and unique processing of the power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

Dynamic dV/dt rating
Ease of paralleling
Simple drive requirements


MOSFET Transistors, Vishay Semiconductor

Related links