Vishay P-Channel MOSFET, 1.8 A, 200 V, 3-Pin TO-220AB IRF9610PBF
- RS Stock No.:
- 542-9462
- Mfr. Part No.:
- IRF9610PBF
- Brand:
- Vishay
Bulk discount available
Subtotal (1 unit)*
£1.31
(exc. VAT)
£1.57
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 21 unit(s) ready to ship
- Plus 26 unit(s) ready to ship from another location
- Plus 1,003 unit(s) shipping from 12 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
1 - 9 | £1.31 |
10 - 49 | £1.17 |
50 - 99 | £1.11 |
100 - 249 | £0.98 |
250 + | £0.91 |
*price indicative
- RS Stock No.:
- 542-9462
- Mfr. Part No.:
- IRF9610PBF
- Brand:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | P | |
Maximum Continuous Drain Current | 1.8 A | |
Maximum Drain Source Voltage | 200 V | |
Package Type | TO-220AB | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 3 Ω | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 2 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +150 °C | |
Width | 4.7mm | |
Length | 10.41mm | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 11 nC @ 10 V | |
Height | 9.01mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.8 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Width 4.7mm | ||
Length 10.41mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 11 nC @ 10 V | ||
Height 9.01mm | ||
Minimum Operating Temperature -55 °C | ||
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