onsemi N-Channel MOSFET, 12 A, 100 V, 3-Pin TO-220AB RFP12N10L
- RS Stock No.:
- 368-3197
- Mfr. Part No.:
- RFP12N10L
- Brand:
- onsemi
Subtotal (1 tube of 50 units)*
£24.55
(exc. VAT)
£29.45
(inc. VAT)
FREE delivery for orders over £50.00
- 400 unit(s) ready to ship
Units | Per unit | Per Tube* |
---|---|---|
50 - 200 | £0.491 | £24.55 |
250 - 450 | £0.478 | £23.90 |
500 - 950 | £0.465 | £23.25 |
1000 - 2450 | £0.454 | £22.70 |
2500 + | £0.442 | £22.10 |
*price indicative
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Each
£0.79
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£0.95
(inc. VAT)
- RS Stock No.:
- 368-3197
- Mfr. Part No.:
- RFP12N10L
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 12 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | TO-220AB | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 200 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 60 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -10 V, +10 V | |
Width | 4.83mm | |
Length | 10.67mm | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Height | 9.4mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 200 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 60 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -10 V, +10 V | ||
Width 4.83mm | ||
Length 10.67mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Height 9.4mm | ||
Minimum Operating Temperature -55 °C | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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