onsemi N-Channel MOSFET, 12 A, 100 V, 3-Pin TO-220AB RFP12N10L

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Subtotal (1 tube of 50 units)*

£24.55

(exc. VAT)

£29.45

(inc. VAT)

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Per Tube*
50 - 200£0.491£24.55
250 - 450£0.478£23.90
500 - 950£0.465£23.25
1000 - 2450£0.454£22.70
2500 +£0.442£22.10

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RS Stock No.:
368-3197
Mfr. Part No.:
RFP12N10L
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Width

4.83mm

Length

10.67mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

9.4mm

Minimum Operating Temperature

-55 °C

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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