onsemi N-Channel MOSFET, 70 A, 60 V, 3-Pin TO-220AB RFP70N06
- RS Stock No.:
- 124-1664
- Mfr. Part No.:
- RFP70N06
- Brand:
- onsemi
Bulk discount available
Subtotal (1 tube of 50 units)*
£46.00
(exc. VAT)
£55.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 200 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 200 | £0.92 | £46.00 |
| 250 - 950 | £0.896 | £44.80 |
| 1000 - 2450 | £0.873 | £43.65 |
| 2500 + | £0.851 | £42.55 |
*price indicative
- RS Stock No.:
- 124-1664
- Mfr. Part No.:
- RFP70N06
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 70 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 14 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 150 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 120 nC @ 20 V | |
| Length | 10.67mm | |
| Number of Elements per Chip | 1 | |
| Width | 4.83mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.4mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 70 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 14 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 120 nC @ 20 V | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Width 4.83mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 9.4mm | ||
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