onsemi N-Channel MOSFET, 70 A, 60 V, 3-Pin TO-220AB RFP70N06
- RS Stock No.:
- 841-312
- Mfr. Part No.:
- RFP70N06
- Brand:
- onsemi
Bulk discount available
Subtotal (1 unit)*
£1.94
(exc. VAT)
£2.33
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 169 unit(s) ready to ship
- Plus 46 unit(s) ready to ship from another location
- Plus 230 unit(s) shipping from 09 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | £1.94 |
| 10 + | £1.67 |
*price indicative
- RS Stock No.:
- 841-312
- Mfr. Part No.:
- RFP70N06
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 70 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 14 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 150 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.67mm | |
| Width | 4.83mm | |
| Typical Gate Charge @ Vgs | 120 nC @ 20 V | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.4mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 70 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 14 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Width 4.83mm | ||
Typical Gate Charge @ Vgs 120 nC @ 20 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 9.4mm | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi N-Channel MOSFET 60 V, 3-Pin TO-220AB RFP70N06
- ROHM N-Channel MOSFET 60 V, 3-Pin TO-220AB RX3L07BGNC16
- Vishay N-Channel MOSFET 60 V, 3-Pin TO-247AC IRFP064PBF
- Vishay N-Channel MOSFET 60 V, 3-Pin TO-247AC IRFP054PBF
- ROHM P-Channel MOSFET 60 V, 3-Pin DPAK RD3L07BATTL1
- ROHM N-Channel MOSFET 40 V, 3-Pin TO-220AB RX3G07CGNC16
- onsemi QFET N-Channel MOSFET 60 V, 3-Pin TO-220AB FQP13N06L
- onsemi QFET N-Channel MOSFET 60 V, 3-Pin TO-220AB FQP30N06