Infineon HEXFET Silicon N-Channel MOSFET, 12 A, 100 V, 3-Pin TO-220 Full-Pak IRFI530NPBF

Bulk discount available

Subtotal (1 tube of 2000 units)*

£1,032.00

(exc. VAT)

£1,238.00

(inc. VAT)

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  • Shipping from 19 December 2025
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Units
Per unit
Per Tube*
2000 - 2000£0.516£1,032.00
4000 +£0.491£982.00

*price indicative

RS Stock No.:
262-6758
Mfr. Part No.:
IRFI530NPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

TO-220 Full-Pak

Mounting Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

Silicon

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It has 4.8mm sink to lead creep age distance. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Fully avalanche rated
High voltage isolation 2.5KVRMS

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