Infineon OptiMOS 6 Power Transistor Silicon N-Channel MOSFET, 62 A, 120 V, 8-Pin PG-TSDSON-8 ISZ106N12LM6ATMA1

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Subtotal (1 pack of 5 units)*

£6.51

(exc. VAT)

£7.81

(inc. VAT)

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5 - 45£1.302£6.51
50 - 95£1.236£6.18
100 - 495£1.146£5.73
500 - 995£1.054£5.27
1000 +£1.016£5.08

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Packaging Options:
RS Stock No.:
285-061
Mfr. Part No.:
ISZ106N12LM6ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

62 A

Maximum Drain Source Voltage

120 V

Package Type

PG-TSDSON-8

Series

OptiMOS 6 Power Transistor

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

Silicon

The Infineon MOSFET is power transistor stands out in high performance applications, designed to cater to the needs of modern electronic systems. Its advanced N channel technology delivers remarkable efficiency and reliability, making it ideal for high frequency switching operations. Crafted for professionals in the field, this product combines low on resistance with superior gate charge characteristics. This makes it a suitable choice for synchronous rectification and industrial applications.

Very low on resistance enhances efficiency
Optimised for high frequency switching
High avalanche energy rating for reliability
Excellent gate charge for quick response
Pb free lead plating for compliance
Operates from 55°C to 175°C
MSL 1 classified for manufacturing ease

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