Infineon OptiMOS 6 Power Transistor Silicon N-Channel MOSFET, 62 A, 120 V, 8-Pin PG-TSDSON-8 ISZ106N12LM6ATMA1
- RS Stock No.:
- 285-061
- Mfr. Part No.:
- ISZ106N12LM6ATMA1
- Brand:
- Infineon
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 285-061
- Mfr. Part No.:
- ISZ106N12LM6ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 62 A | |
| Maximum Drain Source Voltage | 120 V | |
| Series | OptiMOS 6 Power Transistor | |
| Package Type | PG-TSDSON-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 62 A | ||
Maximum Drain Source Voltage 120 V | ||
Series OptiMOS 6 Power Transistor | ||
Package Type PG-TSDSON-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
The Infineon MOSFET is power transistor stands out in high performance applications, designed to cater to the needs of modern electronic systems. Its advanced N channel technology delivers remarkable efficiency and reliability, making it ideal for high frequency switching operations. Crafted for professionals in the field, this product combines low on resistance with superior gate charge characteristics. This makes it a suitable choice for synchronous rectification and industrial applications.
Very low on resistance enhances efficiency
Optimised for high frequency switching
High avalanche energy rating for reliability
Excellent gate charge for quick response
Pb free lead plating for compliance
Operates from 55°C to 175°C
MSL 1 classified for manufacturing ease
Optimised for high frequency switching
High avalanche energy rating for reliability
Excellent gate charge for quick response
Pb free lead plating for compliance
Operates from 55°C to 175°C
MSL 1 classified for manufacturing ease
Related links
- Infineon OptiMOS 6 Power Transistor Silicon N-Channel MOSFET 120 V, 8-Pin PG-TSDSON-8 ISZ106N12LM6ATMA1
- Infineon OptiMOS 6 Power Transistor SiC N-Channel MOSFET 120 V, 8-Pin PG-TSDSON-8 ISZ330N12LM6ATMA1
- Infineon OptiMOS 6 Power Transistor SiC N-Channel MOSFET 120 V, 8-Pin PG-TDSON-8 ISC104N12LM6ATMA1
- Infineon OptiMOS 6 Power Transistor SiC N-Channel MOSFET 120 V, 8-Pin PG-TDSON-8 ISC073N12LM6ATMA1
- Infineon OptiMOS 6 Power Transistor SiC N-Channel MOSFET 120 V, 8-Pin PG-TSON-8 ISC030N12NM6ATMA1
- Infineon OptiMOS 6 Power Transistor SiC N-Channel MOSFET 120 V, 8-Pin PG-TDSON-8 FL ISC037N12NM6ATMA1
- Infineon OptiMOS Power Transistor SiC P-Channel MOSFET 100 V, 8-Pin PG-TSDSON-8 FL ISZ24DP10LMATMA1
- Infineon OptiMOS Power Transistor SiC P-Channel MOSFET 150 V, 8-Pin PG-TSDSON-8 FL ISZ75DP15LMATMA1