Name: Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 6.7 A, 150 V, 8-Pin PG-TSDSON-8 FL ISZ56DP15LMATMA1
Brand: Infineon
SKU: 284-799
Price: 0.56 GBP
Availability: Discontinued

The Infineon MOSFET is an OptiMOS Power Transistor presents an innovative solution for high efficiency power management. This versatile P channel MOSFET is specifically engineered to accommodate both high and low switching frequency applications. Boasting a robust thermal resistance framework, the device ensures reliable performance even under challenging operational conditions. With its Pb free lead plating and compliance with RoHS standards, this transistor embodies environmentally friendly practices while maintaining exceptional electrical characteristics. Fully validated for industrial applications and 100% avalanche tested, the OptiMOS not only elevates system reliability but also enhances overall energy efficiency, making it an ideal choice for modern electronic designs.

Optimised for superior thermal performance
Halogen free for eco friendly applications
Robust under various industrial conditions
Logic level drive for simplified control
Validated per JEDEC standards
Easy integration into power circuits

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	6.7 A
	Maximum Drain Source Voltage	150 V
	Series	OptiMOS Power Transistor
	Package Type	PG-TSDSON-8 FL
	Mounting Type	Surface Mount
	Pin Count	8
	Channel Mode	Enhancement
	Number of Elements per Chip	1
	Transistor Material	SiC

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 6.7 A
	Maximum Drain Source Voltage 150 V
	Series OptiMOS Power Transistor
	Package Type PG-TSDSON-8 FL
	Mounting Type Surface Mount
	Pin Count 8
	Channel Mode Enhancement
	Number of Elements per Chip 1
	Transistor Material SiC

Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 6.7 A, 150 V, 8-Pin PG-TSDSON-8 FL ISZ56DP15LMATMA1

Related links

Be the first to know about our latest products and services