Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 5.1 A, 150 V, 8-Pin PG-TSDSON-8 FL ISZ75DP15LMATMA1
- RS Stock No.:
- 284-802
- Mfr. Part No.:
- ISZ75DP15LMATMA1
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 284-802
- Mfr. Part No.:
- ISZ75DP15LMATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 5.1 A | |
| Maximum Drain Source Voltage | 150 V | |
| Series | OptiMOS Power Transistor | |
| Package Type | PG-TSDSON-8 FL | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 5.1 A | ||
Maximum Drain Source Voltage 150 V | ||
Series OptiMOS Power Transistor | ||
Package Type PG-TSDSON-8 FL | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
The Infineon MOSFET is a cutting edge power transistor designed for high performance applications. Engineered with advanced OptiMOS technology, this device delivers exceptional efficiency while operating at a maximum voltage of 150 V. Its low on resistance attribute ensures minimised energy losses, making it ideal for applications requiring reliable power management. The product is fully qualified according to JEDEC standards, guaranteeing its suitability for demanding industrial environments. With robust thermal characteristics and the ability to withstand high continuous drain current, it exemplifies reliability and durability in diverse conditions.
P Channel design for versatile power management
Enhanced thermal resistance for reliability
100% avalanche tested for safety
Logic level compatibility simplifies design
Pb free lead plating for eco friendly practices
Halogen free construction meets regulations
Wide operating temperature range for flexibility
Compact PG TSDSON 8 package for easy integration
Enhanced thermal resistance for reliability
100% avalanche tested for safety
Logic level compatibility simplifies design
Pb free lead plating for eco friendly practices
Halogen free construction meets regulations
Wide operating temperature range for flexibility
Compact PG TSDSON 8 package for easy integration
Related links
- Infineon OptiMOS Power Transistor SiC P-Channel MOSFET 150 V, 8-Pin PG-TSDSON-8 FL ISZ75DP15LMATMA1
- Infineon OptiMOS Power Transistor SiC P-Channel MOSFET 100 V, 8-Pin PG-TSDSON-8 FL ISZ24DP10LMATMA1
- Infineon OptiMOS Power Transistor SiC P-Channel MOSFET 150 V, 8-Pin PG-TSDSON-8 FL ISZ56DP15LMATMA1
- Infineon OptiMOS Power Transistor SiC P-Channel MOSFET 60 V, 8-Pin PG-TSDSON-8 FL ISZ810P06LMATMA1
- Infineon OptiMOS Power Transistor SiC P-Channel MOSFET 150 V, 8-Pin PG-TSDSON-8 FL ISZ15EP15LMATMA1
- Infineon OptiMOS 6 Power Transistor SiC N-Channel MOSFET 120 V, 8-Pin PG-TSDSON-8 ISZ330N12LM6ATMA1
- Infineon OptiMOS Power Transistor SiC P-Channel MOSFET 150 V, 8-Pin PG-TDSON-8 ISC16DP15LMATMA1
- Infineon OptiMOS Power Transistor SiC P-Channel MOSFET 60 V, 8-Pin PG-TDSON-8 ISC800P06LMATMA1