Infineon OptiMOS 6 Power Transistor SiC N-Channel MOSFET, 24 A, 120 V, 8-Pin PG-TSDSON-8 ISZ330N12LM6ATMA1

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RS Stock No.:
284-796
Mfr. Part No.:
ISZ330N12LM6ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

120 V

Series

OptiMOS 6 Power Transistor

Package Type

PG-TSDSON-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET is designed to meet the rigorous demands of modern electronic applications, boasting optimum efficiency and reliability. The advanced OptiMOS 6 technology empowers this component to deliver exceptional performance across various operating conditions, ensuring it remains a top choice for engineers and developers. Its robust design reflects a careful balance between high switching speeds and low on resistance, making it an excellent candidate for high frequency applications such as synchronous rectification and power management. The transistor is particularly well suited for industrial environments, with a thermal rating that supports both extensive operational ranges and heavy duty cycling.

Optimised for high frequency switching
Pb free lead plating for compliance
Halogen free for environmental sustainability
MSL 1 classified for reliable assembly
Superior thermal efficiency with low on resistance
Excellent gate charge for faster switching
Fully qualified per JEDEC standards

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